Applications In Nanoelectronics Research Articles

From topological nodal-line semimetals to quantum spin Hall insulators in tetragonal SnX monolayers (X=F, Cl, Br, I)

Abstract Two-dimensional (2D) topological materials have recently garnered significant interest due to their profound physical properties and promising applications for future quantum nanoelectronics. Achieving various topological states within one type of materials is, however, seldom reported. Based on first-principles calculations and tight-binding models, we investigate topological electronic states in a novel family of 2D halogenated tetragonal stanene (T-SnX, X = F, Cl, Br, I). All the four monolayers are found being unusual topological nodal-line semimetals (NLSs), protected by a glide mirror symmetry. When spin-orbit coupling (SOC) is turned on, T-SnF and TSnCl are still ascertained as topological NLSs due to the remaining band inversion, primarily composed of Sn pxy orbitals, while T-SnBr and T-SnI become quantum spin Hall insulators. The phase transition is ascribed to moving up in energy of Sn s orbitals and increasing of SOC strengths. The topology origin in the materials is uniformly rationalized through elementary band representations. The robust and diverse topological states found in the 2D T-SnX monolayers position them as an excellent material platform for the development of innovative topological electronics.

Conductance Quantization in 2D Semi-Metallic Transition Metal Dichalcogenides.

Conductance quantization of 2D materials is significant for understanding the charge transport at the atomic scale, which provides a platform to manipulate the quantum states, showing promising applications for nanoelectronics and memristors. However, the conventional methods for investigating conductance quantization are only applicable to materials consisting of one element, such as metal and graphene. The experimental observation of conductance quantization in transition metal dichalcogenides (TMDCs) with complex compositions and structures remains a challenge. To address this issue, an approach is proposed to characterize the charge transport across a single atom in TMDCs by integrating in situ synthesized 1T'-WTe2 electrodes with scanning tunneling microscope break junction (STM-BJ) technique. The quantized conductance of 1T'-WTe2 is measured for the first time, and the quantum states can be modulated by stretching speed and solvent. Combined with theoretical calculations, the evolution of quantized and corresponding configurations during the break junction process is demonstrated. This work provides a facile and reliable avenue to characterize and modulate conductance quantization of 2D materials, intensively expanding the research scope of quantum effects in diverse materials.

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications.

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) and transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length (Lg) ultrathin In2O3 FETs. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of ultrathin In2O3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of ultrathin In2O3 (3.0 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with Lg down to 3 nm. Notably, both the HP and LP ultrathin In2O3 FETs exhibit superior energy-delay products as compared to those of other common 2D semiconductors such as monolayer MoS2 and MoTe2. These findings unveil the potential of ultrathin In2O3 in HP and LP nanoelectronic device applications.

Collapse of carbon nanotubes due to local high-pressure from van der Waals encapsulation

Van der Waals (vdW) assembly of low-dimensional materials has proven the capability of creating structures with on-demand properties. It is predicted that the vdW encapsulation can induce a local high-pressure of a few GPa, which will strongly modify the structure and property of trapped materials. Here, we report on the structural collapse of carbon nanotubes (CNTs) induced by the vdW encapsulation. By simply covering CNTs with a hexagonal boron nitride flake, most of the CNTs (≈77%) convert from a tubular structure to a collapsed flat structure. Regardless of their original diameters, all the collapsed CNTs exhibit a uniform height of ≈0.7 nm, which is roughly the thickness of bilayer graphene. Such structural collapse is further confirmed by Raman spectroscopy, which shows a prominent broadening and blue shift in the Raman G-peak. The vdW encapsulation-induced collapse of CNTs is fully captured by molecular dynamics simulations of the local vdW pressure. Further near-field optical characterization reveals a metal-semiconductor transition in accompany with the CNT structural collapse. Our study provides not only a convenient approach to generate local high-pressure for fundamental research, but also a collapsed-CNT semiconductor for nanoelectronic applications.

Domains with Varying Conductance in Tensile Strained SrMnO3 Thin Films Using Out‐of‐Plane Electric Fields

AbstractDomains and domain wall engineering have been extensively explored in ferroic materials for a wide range of applications in nanoelectronics and spintronics. Complex oxides exhibiting strongly correlated properties are model platforms for such studies where response to strain or external stimuli such as electric field, temperature and light can be probed. Here, domains in strained SrMnO3 films, grown on a degenerate semiconductor, allowing for conduction in an out‐of‐plane geometry, are studied using a combination of microscopy probes. Using conductive atomic force microscopy, electrically isolated domains with varying conductance are found and their temporal evolution is investigated. Further, their formation and microstructure are studied using scanning transmission electron microscopy and secondary electron contrast in scanning electron microscopy. An important contribution is establishing that the observed domains are formed by cracks, driven by inhomogeneous strain relaxation throughout the film, resulting in significantly high strain planes. The potential of secondary electrons to detect domain dependent contrast over a large area, ensuing due to the use of a degenerate semiconductor correlates with the conductive properties of the domains and serves as a new direction to probe domains and domain walls in ferroic materials.

Terminalia bellirica (Gaertn.) Roxb. extract-mediated green synthesis of magnesium oxide nanoparticles for multifunctional applications

Green synthesis has emerged as a pivotal facet of nanotechnology, garnering significant attention for its inherent safety and eco-friendly attributes. This study presents a novel approach utilizing phytochemicals derived from Terminalia bellirica (Gaertn.) Roxb. fruit extract for the environmentally benign synthesis of magnesium oxide (MgO) nanoparticles. The resultant MgO nanoparticles were comprehensively characterized using UV–visible spectroscopy, X-ray Diffractometer (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Energy dispersive X-ray (EDX), and High-Resolution-Transmission Electron Microscope (HR-TEM). The synthesized MgO nanoparticles exhibited remarkable stability, evidenced by zeta potential of −8.84 mV and an average size of 73.41 nm. In an eco-physiological context, the application of MgO nanoparticles at a concentration of 5 mg/100 ml significantly enhanced shoot length (7.94±0.70 cm), root length (8.44±0.53 cm), moisture content (97.16±0.83%), and chlorophyll expression (18.34±0.99 mg/g fresh weight (FW)) in Trigonella foenum-graecum seedlings. Furthermore, the MgO nanoparticles demonstrated biocompatibility with soil bacteria and exhibited potent photocatalytic activity, achieving a 42% degradation efficiency of the organic dye methyl orange under UV irradiation for 60 minutes. In the realm of biomedical applications, MgO nanoparticles displayed dose-dependent cytotoxicity against human breast cancer cells (MCF-7), with an IC50 value of 37.39±0.05 µg/ml. Remarkably, MgO nanoparticles were also harnessed for their memcapacitive properties, showcasing excellent non-volatile memory characteristics, including endurance for 15,000 cycles and retention for 4000 seconds. In summary, this study underscores the multifunctional prowess of MgO nanoparticles synthesized through Terminalia bellirica fruit extract, spanning applications in plant physiology, environmental remediation, cancer therapeutics, and nanoelectronics. The environmentally conscious synthesis approach and diverse functionalities presented herein position these nanoparticles as future promising candidates for sustainable and versatile technological advancements.

First-principles study on the p-orbital multiferroicity of single-layer XN (X = Ge, Sn, Pb)

Two-dimensional (2D) multiferroic materials have triggered a burst of interest owing to their wide applications in nanoelectronics. Specifically, p-orbital multiferroicity is strongly desired but has been very few reported. Here, based on first-principles calculations, we unveil a new type of 2D multiferroic material: the single-layer (SL) XN (X = Ge, Sn, Pb). Our findings show these materials are ferromagnetic semiconductors with strong magnetoelectric coupling and wide bandgaps. The multiferroicity is related to the unpaired p-orbital electrons of N atoms and the buckled crystal structure. All the single layers show easy-plane magnetocrystalline anisotropy, and the magnetic anisotropy energy increases significantly with the atomic number increasing. Our Monte Carlo simulations suggest the Curie temperature TC is 205.44 K, 200.45 K, and 287.88 K for SL GeN, SnN, and PbN, respectively. By applying tensile strain, the TC can be further increased to 225.39 K, 245.35 K, 369.99 K, respectively. Additionally, biaxial strain can induce semiconductor-to-half-metal and ferroelectricity-to-paraelectricity transition in the single layers. We aspire that our work contributes to the exploration of room-temperature p-orbital multiferroicity.

First-principle study of CrO2-BNNT-CrO2 based MTJ device using EHTB model and its application in a MRAM circuit

In this work we investigated the performance of Single-Walled Boron Nitride Nanotube (SWBNNT) sandwiched between CrO2 based Magnetic Tunnel Junction (MTJ) structures with atomistic simulations. MTJ based device-level simulation was performed using the Extended Huckel based Tight Binding (EHTB) model. The SWBNNT as a dielectric layer and CrO2 as Ferromagnetic (FM) layers based Magnetic Tunnel Junction (MTJ) heterostructure was computed. The proposed MTJ device operates at the nano-Ampere (nA) range depicting its potential application in a low-powered nanoelectronics device. It also shows a promising Tunnel Magnetoresistance (TMR) effect. The practical circuit-level implementation of the proposed MTJ device in Magnetic Random-Access Memory (MRAM) was validated using LTspice. Hence, the calculated static power consumption and writing energy per bit was minimal for S1 and S2 based MRAM circuit. The perfect switching operation was depicted by the proposed MTJ device based MRAM.

Engineering van der Waals Contacts by Interlayer Dipoles.

Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.

Area-selective atomic layer deposition of Ru thin films by chemo-selective inhibition of alkyl aldehyde molecules on nitride surfaces

Area-selective atomic layer deposition (AS-ALD) on pre-defined areas is of crucial importance nowadays in significantly reducing complexities associated with current top-down fabrication processes. In this work, we report the effects of surface modification using various alkyl aldehyde inhibitors with different chain lengths—hexanal, decanal, and undecanal—on nitride surfaces such as TiN and SiN to achieve AS-ALD. On the basis of density functional theory calculations and experimental analysis, including water contact angle and X-ray photoelectron spectroscopy, it is evident that aldehydes would chemo-selectively react with the –NH2 functional groups present on the nitride surfaces. Then, we further investigate their blocking ability against subsequent Ru ALD, a promising next-generation electrode material. It is worth noting that the Ru deposition thickness decreased by 4–10 nm with the presence of undecanal adsorbed on SiN and TiN substrates. Finally, we successfully demonstrate AS-ALD of Ru thin films over 8 nm on a patterned TiN/SiO2 substrate. These results hold potential for applications in bottom-up nanofabrication techniques for next-generation nanoelectronic applications.

Reduction of off-state drain current in AlN/[formula omitted] HEMT by trap state engineering

In this work, we report various strategies to reduce the off-state drain leakage current (IOFF) in AlN/β−Ga2O3 high electron mobility transistor (HEMT) by 2D device simulation. We have investigated the effect of access region, channel doping concentration, barrier layer thickness, and trap state engineering on IOFF. The formation of a parallel channel deep into the substrate has been found to be responsible for large IOFF. All other strategies except trap state engineering have an incremental effect on IOFF. However, the device’s IOFF was reduced by around 12 orders of magnitude by trap-state engineering. Simultaneously, the on-state performance was unaffected, resulting in an elevated ION/IOFF current ratio of (1013). A steep subthreshold slope of 0.267 (V/dec) was also obtained. Further, we have investigated the impact of both donor- and acceptor-type traps on subthreshold characteristics. These promising results enhance the potential of AlN/β−Ga2O3 HEMT as a switch and for future high-power nanoelectronics applications.

Exploring the effect of BN doping in two-dimensional fullerene networks through first principle simulations

The doping of lighter non-metals like boron and nitrogen into fullerene C60 represents a promising advancement in the field of nanoelectronic devices. These doped two-dimensional (2D) materials offer improved stability and enhanced adsorption characteristics compared to pure form. Notably, It displays semiconducting behaviour, resulting in higher conductivity and carrier mobility. This study investigates the structural, electronic, optical, and conductivity/carrier transport properties of 2D polymer sheets made of fullerene, both with and without boron and nitrogen doping. We employ density functional theory (DFT) with PBE and HSE functionals, considering the inclusion of van der Waals (vdW) interactions. The research findings indicate that the 2D sheets of C60,C58B1N1, and C54B3N3 exhibit band gaps of approximately 0.97eV(1.51eV),1.08eV(1.65eV), and 1.05eV(1.56eV), respectively, as obtained from PBE (HSE) calculations. Moreover, according to the deformation potential theory, C58B1N1 exhibit ultra-high conductivity (1014Ω-1cm-1s-1 at room temperature). These sheets display cohesive energies of −8.76, −8.72, and -8.67eV, respectively, indicating their stability. These results are promising and underscore the significance of a single pair of BN dopants in fullerene monolayers for advancing next-generation 2D nano-electronic applications.

Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation

Area-selective atomic layer deposition (AS-ALD) has garnered significant attention as a promising bottom-up patterning process for sub-10 nm scale technology, offering unmatched atomic-scale precision and pattern alignment capabilities in 3D nanofabrication. In this study, we present a groundbreaking methodology for achieving highly selective deposition of Hf1-xZrxO2 (HZO) thin films through catalytic local activation on noble metal surfaces (Ru and Pt) and TiN surfaces, without the need for surface inhibitory materials. To achieve inherent selectivity on metal surfaces, we employ O2 gas as a mildly oxidizing reactant and utilize cyclopentadienyl-tris(dimethylamido)-hafnium(zirconium) [Hf(Zr)Cp(NMe2)3] precursors, which require strong oxidizing agents, for HZO film formation. By catalytically dissociating O2 molecules, we successfully achieved area-selective deposition of HZO films greater than ∼7 nm on both blanket Ru versus Si substrates and Pt/Si-patterned substrates. Furthermore, we demonstrate the selective deposition of antiferroelectric HZO thin films with high dielectric constants of 34 and 31 on Ru and TiN substrates, respectively, using the inherent AS-ALD method combined with post-ozone treatment. Importantly, this catalytic local activation approach for achieving inherent deposition selectivity expands the potential utility of 3D bottom-up nanopatterning processes in next-generation nanoelectronic applications.

Directed Self-Assembly of Cylinder-Forming Block Copolymers Using Pillar Topographic Patterns.

We conducted a computational study on the self-assembly behavior of cylinder-forming block copolymers, directed by a guide pattern of hexagonally or tetragonally arrayed pillars, using mesoscale density functional theory simulations. By adjusting the spacing (Lp) and diameter (D) of the pillars in relation to the intrinsic cylinder-to-cylinder distance (L2) of the cylinder-forming block copolymer, we investigated the efficiency of multiple-replicating cylinders, generated by the block copolymer, through the pillar-directed self-assembly process. The simulations demonstrated that at specific values of normalized parameters L˜2=L2/Lp and D˜=D/Lp coupled with suitable surface fields, triple and quadruple replications are achievable with a hexagonally arrayed pillar pattern, while only double replication is attainable with a tetragonally arrayed pillar pattern. This work, offering an extensive structure map encompassing a wide range of possible parameter spaces, including L˜2 and D˜, serves as a valuable guide for designing the contact hole patterning essential in nanoelectronics applications.

Physics mechanisms underlying the optimization of coherent heat transfer across width-modulated nanowaveguides with calculations and machine learning

Optimization of heat transfer at the nanoscale is necessary for efficient modern technology applications in nanoelectronics, energy conversion, and quantum technologies. In such applications, phonons dominate thermal transport and optimal performance requires minimum phonon conduction. Coherent phonon conduction is minimized by maximum disorder in the aperiodic modulation profile of width-modulated nanowaveguides, according to a physics rule. It is minimized for moderate disorder against physics intuition in composite nanostructures. Such counter behaviors call for a better understanding of the optimization of phonon transport in non-uniform nanostructures. We have explored mechanisms underlying the optimization of width-modulated nanowaveguides with calculations and machine learning, and we report on generic behavior. We show that the distribution of the thermal conductance among the aperiodic width-modulation configurations is controlled by the modulation degree irrespective of choices of constituent material, width-modulation-geometry, and composition constraints. The efficiency of Bayesian optimization is evaluated against increasing temperature and sample size. It is found that it decreases with increasing temperature due to thermal broadening of the thermal conductance distribution. It shows weak dependence on temperature in samples with high discreteness in the distribution spectrum. Our work provides new physics insight and indicates research pathways to optimize heat transfer in non-uniform nanostructures.

Design and simulation of power efficient carbon nanotube field effect transistor based active notch filters for nano electronic applications

Design and simulation of power efficient carbon nanotube field effect transistor based active notch filters for nano electronic applications

Fabrication and Tailoring Structural, Optical, and Dielectric Properties of PS/CoFe2O4 Nanocomposites Films for Nanoelectronics and Optics Applications

Fabrication and Tailoring Structural, Optical, and Dielectric Properties of PS/CoFe2O4 Nanocomposites Films for Nanoelectronics and Optics Applications

Modification and Development of the Structural, Morphological and Dielectric Characteristics of Polyvinyl Alcohol Incorporated with Cerium Dioxide / Silicon Carbide Nanoparticles for Nanodielectric and Nanoelectronic Applications

Modification and Development of the Structural, Morphological and Dielectric Characteristics of Polyvinyl Alcohol Incorporated with Cerium Dioxide / Silicon Carbide Nanoparticles for Nanodielectric and Nanoelectronic Applications

Electrochemically structured tantalum surfaces via anodization for core-shell nanostructures: Optimization and characterization of Zn-ZnO nanoparticle deposition using magnetron sputtering

This study explores the electrochemical anodization of tantalum surfaces to create nanostructured substrates for the deposition of Zn-ZnO nanoparticles (NPs) through magnetron sputtering. The anodization process, conducted at different potentials (25 V and 50 V), resulted in tantalum surfaces with distinct dimple structures. The formation of these nano-level dimples is attributed to the dynamic equilibrium between the continuous formation and dissolution of the anodic TaOx layer. The dimple diameter is observed to increase with applied potential, correlating with the dissolution rate of the anodic oxide. The NP deposition parameters were studied in two steps. First, the effect of the deposition conditions on the nanoparticle size and distribution was evaluated and optimized on silicon substrates. Second, the conditions that resulted in the optimum size and distribution of the nanoparticles were utilized in tantalum substrates and evaluated to which extent these conditions were reproduced onto the anodized Ta substrate. Comparisons of Zn-ZnO nanoparticle depositions on silicon and tantalum substrates reveal similar island growth trends, with differences in nanoparticle size and distribution attributed to substrate properties. Further investigation involves anodized tantalum substrates with varying dimple sizes, and deposition conditions are adjusted with bias voltage, pressure, and deposition time to control nanoparticle characteristics. Characterization of the Zn-ZnO nanoparticles deposited on anodized tantalum surfaces is performed using scanning electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The resulting core-shell structures are confirmed through structural analysis, revealing a core of hexagonal close-packed Zn and a shell of ZnO. The study demonstrates the influence of substrate properties and deposition conditions on the morphology and composition of Zn-ZnO nanoparticles, providing insights for applications in nanoelectronics and catalysis.

Ameliorating and tailoring the morphological, structural, and dielectric features of Si3N4/CeO2 futuristic nanocomposites doped PEO for nanoelectronic and nanodielectric applications

Ameliorating and tailoring the morphological, structural, and dielectric features of Si3N4/CeO2 futuristic nanocomposites doped PEO for nanoelectronic and nanodielectric applications